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Observation and Study of Wavelength Dependence of The Open-Circuit Voltage In a-Si:H BASED p-i-n SOLAR Cells

Published online by Cambridge University Press:  28 February 2011

M. Gorn ,
N. Kniffler  and
G. Winterling
M. Gorn
Affiliation:
Energy and Process Technology Group, Messerschmitt-Bölkow- Blohm GmbH, P.O. Box 80 11 09, D-8000 München 80, Federal Republic of Germany
N. Kniffler
Affiliation:
Energy and Process Technology Group, Messerschmitt-Bölkow- Blohm GmbH, P.O. Box 80 11 09, D-8000 München 80, Federal Republic of Germany
G. Winterling
Affiliation:
Energy and Process Technology Group, Messerschmitt-Bölkow- Blohm GmbH, P.O. Box 80 11 09, D-8000 München 80, Federal Republic of Germany
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Abstract

The spectral dependence of Voc is studied in a-Si:H based p-i-n junctions by using chopped monochromatic light. A dispersion ΔVoc = Voc(blue) - Voc(red) is observed which depends systematically on a low level doping of the central layer. While ΔVoc is largest and positive in phosphorous doped cells it is negative in boron doped cells. Voc is found to be enhanced by an additional white bias light.

The dispersion data are discussed by considering the contributions to Voc arising from drift in an inhomogeneous field and from carrier diffusion.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 537
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

[1] Gorn, M., Kniffler, N., Müller, G., and Winterling, G., Proc. of the 6th Europ. Photovoltaic Solar Energy Conference, London 1985, p. 707Google Scholar
[2] see ref. 1Google Scholar
[3] Gorn, M., to be publishedGoogle Scholar
[4] Fonash, S. J., Solar Cell Device Physics, edited by Denton, I. (Energy Science and Engineering, Academie Press, New York, 1981), p.60 Google Scholar
[5] see Street, e.g. R.A. and Biegelsen, D.K., in The Physics of Hydrogenated Amorphous Silicon II, edited by Joannopoulos, J.D. and Lucovsky, G. (Springer-Verlag, Berlin Heidelberg New York Tokyo, 1984) p.244 Google Scholar
[6] Crandall, R.S., I. Appl. Phys. 55, 4418 (1984)CrossRefGoogle Scholar