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Novel Plasma Control Method in PECVD for Preparing Microcrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

T. Nishimiya
Affiliation:
Thin Film Silicon Solar Cells Super Lab. Electrotechnical Laboratory Umezono, Tukuba-shi, Ibaraki 305, JAPAN MITSUBISHI HEAVY INDUSTRIES, LTD., Fukahori-machi, Nagasaki 851–03, Japan
M. Kondo
Affiliation:
Thin Film Silicon Solar Cells Super Lab. Electrotechnical Laboratory Umezono, Tukuba-shi, Ibaraki 305, JAPAN
A. Matsuda
Affiliation:
Thin Film Silicon Solar Cells Super Lab. Electrotechnical Laboratory Umezono, Tukuba-shi, Ibaraki 305, JAPAN
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Abstract

A novel plasma enhanced vapor deposition (PECVD) technique employing biased wall (BW) method has been developed for the enhanced growth rate of the hydrogenated microcrystalline silicon (μc-Si:H) films. Using this method, we have achieved a growth rate of more than 6Å/sec for the formation of μc-Si-H having an average grain size of 200Å; at 350°C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Matsuda, A., Kumagai, K., and Tanaka, K., Jpn. J. Appl. Phys. 22, L34(1983)CrossRefGoogle Scholar
2. Tsai, C. C., in Amorphous Silicon and Related Matriais ed. Fritzsche, H., World Scientific Google Scholar
3. Oda, S., Noda, J. and Matsumura, M., Mat. Res. Soc. Symp. Proc. 118, 117 (1988)CrossRefGoogle Scholar
4. Nakata, M., Sakai, A., Uematsu, T., Namikawa, T., Shirai, H., Hanna, J. and and Shimizu, I., Phi Mag. B63, 87 (1991)CrossRefGoogle Scholar
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6. Kondo, M., Toyoshima, Y., Dcuta, K. and Matsuda, A., J. Appl. Phys. 80, 6061 (1996)CrossRefGoogle Scholar

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