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Novel Mid-Infrared Lasers with Compressively Strained InAsSb Active Regions
Published online by Cambridge University Press: 10 February 2011
Abstract
Mid-infrared lasers grown by MOCVD with ALAsSb claddings and strained InAsSb active regions are reported. A 3.8–3.9 μm injection laser with a pseudomorphic InAsSb multiple quantum well active region lased at 210 K under pulsed operation. A semi-metal layer acts as an internal electron source for the injection laser. An optically pumped laser with an InAsSb/InAsP strained-layer superlattice active region was demonstrated at 3.7 μm, 240 K.
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- Copyright © Materials Research Society 1997