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A Novel Method for Fabrication of Hyhdrogenated Amorphous Silicon and High Quality Poly-SI Films on the Same Substrate by Employing Excimer Laser

Published online by Cambridge University Press:  15 February 2011

Kwon-Young Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
Jong-Wook Lee
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
Hyoung-Bae Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
Jae-Hong Jeon
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
Min-Koo Han
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
Yong-Sang Kim
Affiliation:
Department of Electrical Engineering, Myongji University, Kyonggi-do, Korea
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Abstract

We have fabricated the a-Si:H film for pixel region and poly-Si film for driver region on the same glass substrate by a rapid thermal process successfully. By employing the halogen lamp, the considerable amount of hydrogen in the PECVD a-Si:H film, which causes the undesirable film ablation due to hydrogen evolution during excimer laser annealing, could be reduced selectively in the peripheral driver area where the a-Si:H film is recrystallized into poly-Si film in order to obtain the high mobility. After rapid thermal annealing, the hydrogen content in a-Si:H films, of which the inherent hydrogen content was found to be about 10–12 at. %, is successfully reduced to less than 5 at. %. The annealing conditions for dehydrogenation are 500, 550, 600 and 650 °C with various halogen lamp irradiation period which are below the point of the glass shrinkage. It should be noted that after rapid thermal annealing, any physical damage in the glass substrate has not been observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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A Novel Method for Fabrication of Hyhdrogenated Amorphous Silicon and High Quality Poly-SI Films on the Same Substrate by Employing Excimer Laser
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A Novel Method for Fabrication of Hyhdrogenated Amorphous Silicon and High Quality Poly-SI Films on the Same Substrate by Employing Excimer Laser
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A Novel Method for Fabrication of Hyhdrogenated Amorphous Silicon and High Quality Poly-SI Films on the Same Substrate by Employing Excimer Laser
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