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A novel 3C-SiC on Si power Schottky diode design and modelling

Published online by Cambridge University Press:  10 June 2014

Fan Li
Affiliation:
School of Engineering, University of Warwick, Library Road, Coventry, CV4 7AL, UK.
Yogesh K. Sharma
Affiliation:
School of Engineering, University of Warwick, Library Road, Coventry, CV4 7AL, UK.
Craig A. Fisher
Affiliation:
School of Engineering, University of Warwick, Library Road, Coventry, CV4 7AL, UK.
Michael R. Jennings
Affiliation:
School of Engineering, University of Warwick, Library Road, Coventry, CV4 7AL, UK.
Philip A. Mawby
Affiliation:
School of Engineering, University of Warwick, Library Road, Coventry, CV4 7AL, UK.
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Abstract

Although 3C-SiC has a narrower bandgap than 4H-SiC, it is the only SiC polytype that can be grown directly over large area silicon substrates. It has the potential to provide a more economical choice than 4H-SiC for intermediate power devices, such as inverters for electric vehicles. To fabricate a vertical device on 3C-SiC, the Si substrate is usually removed either by etching or polishing. Neither of these processes is economical nor efficient. In this paper we propose a lateral Schottky diode design for 3C-SiC on Si structure. 2D finite element simulations using ATLAS showed that a breakdown voltage beyond 1200 V can be achieved with a 4 μm thick epilayer. Physical models used for 3C-SiC/Si power devices simulations are introduced. Advantages of lateral 3C-SiC/Si diodes over free standing 3C-SiC are also discussed.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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