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Noise properties of a single ZnO nanowire device

Published online by Cambridge University Press:  01 February 2011

Choi Soo Han
Affiliation:
blur23@naver.com, Korea Univeristy, School of Electrical Engineering, Anam-Dong, Seoul, N/A, Korea, Republic of
Dong Wook Kim
Affiliation:
tweetymint@gmail.com, Korea University, School of Electrical Engineering, Seoul, N/A, Korea, Republic of
Do Young Jang
Affiliation:
ehdud98@naver.com, Korea University, School of Electrical Engineering, Seoul, N/A, Korea, Republic of
Hyun Jin Ji
Affiliation:
rjaks82@hanmail.net, Korea University, School of Electrical Engineering, Seoul, N/A, Korea, Republic of
Sang Woo Kim
Affiliation:
kimsw@kumoh.ac.kr, Kumoh National Institute of Technology, School of Advanced Materials and System Engineering, Gumi, N/A, Korea, Republic of
So Jung Park
Affiliation:
tooz19@gmail.com, Electronics and Telecommunications Research Institute, Daejeon, N/A, Korea, Republic of
Seung Eon Moon
Affiliation:
semoon@etri.re.kr, Electronics and Telecommunications Research Institute, Daejeon, N/A, Korea, Republic of
Gyu Tae Kim
Affiliation:
gtkim@korea.ac.kr, Korea University, School of Electrical Engineering, Seoul, N/A, Korea, Republic of
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Abstract

The low frequency noise of individual ZnO nanowire (NW) field effect transistors (FETs) exposed to air is systematically characterized. The measured noise power spectrum shows a classical 1/f type. The noise amplitude is independent of source-drain current and inversely proportional to gate voltage. The extracted Hooge's constant of ZnO NW is found to be 6.52×10−3. In addition, the low frequency noise of ZnO NW according to NW resistance and contact property are investigated. The noise amplitude is proportional to the square of ZnO NW resistance. If a sample shows a nonlinear current-voltage (I-V) characteristic due to a poor electrical contact, the noise power spectrum is proportional to the third power of current instead of the square of current.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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