Skip to main content Accessibility help
×
Home
Hostname: page-component-564cf476b6-s5ssh Total loading time: 0.291 Render date: 2021-06-18T16:28:22.711Z Has data issue: false Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Nitridation Of Sapphire Substrate Using Remote Plasma Enhanced-Ultrahigh Vacuum Chemical Vapor Deposition At Low Temperature

Published online by Cambridge University Press:  10 February 2011

Jong-Sik Paek
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea
Kyoung-Kook Kim
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea
Ji-Myon Lee
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea
Dong-Jun Kim
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea
Hyo-Gun Kim
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea
Seong-Ju Park
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea
Get access

Abstract

A remote plasma enhanced-ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) system equipped with a radio frequency-inductively coupled plasma (RF-ICP) which produces the reactive nitrogen species was employed to study the nitridation process at low temperature. The sapphire surface nitridated under various conditions was investigated with x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The nitridation process seems to be mostly affected by the RF power even at low temperature since the intensity of the N1s, peak was not dependent on the substrate temperature but on the RF power. The AFM images showed that the protrusion density on the sapphire surface decreased rapidly when the nitridation temperature was decreased. This result suggests that the formation of the protrusions is closely related to the process temperature, indicating that the formation of such protrusions is caused by the change of an elastic strain energy due to the thermal stress. It was possible to nitridate the sapphire surface without protrusion at a very low temperature. The crystallinity of GaN grown at 450 °C was found to be much improved when the sapphire substrate was nitridated at low temperature prior to the GaN layer growth.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Vennegues, P., Beaumont, B., Vaille, M., and Gibart, P., J. Cryst. Growth 173, 249 (1997).10.1016/S0022-0248(96)01050-0Google Scholar
2. Grandjean, N., Massies, J., and Leroux, M., Appl. Phys. Lett. 69, 2071 (1996): N. Grandjean, J. Massies, P. Vennegues, M. Laugt, and M. Leroux, Appl. Phys. Lett. 70, 643 (1997).10.1063/1.116883Google Scholar
3. Keller, S., Keller, B. P., Wu, Y. -F., Heying, B., Kapolnek, d., Speck, J. S., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 68, 1525 (1996).10.1063/1.115687Google Scholar
4. Uchida, K., Watanabe, A., Yano, F., Kouguchi, M., Tanaka, T., and Minagawa, S., J. Appl. Phys. 79, 3487 (1996).10.1063/1.361398Google Scholar
5. Suetsugu, T., Yamazaki, T., Tomabechi, S., Woda, K., Masu, K., Tsubouchi, K., Appl. Surf. Sci. 117/118 540 (1997).10.1016/S0169-4332(97)80139-0Google Scholar
6. Heinlein, C., Grepstad, J., Riechert, H., and Averbeck, R., Materials Science and Engineering B 43, 253 (1997).10.1016/S0921-5107(96)01878-8Google Scholar
7. Taferner, W. T., Bensaoula, A., Kim, E., and Bousetta, A., J. of Cryst. Growth 164, 167 (1996).10.1016/0022-0248(96)00020-6Google Scholar
8. Taylor, J. A. and Rabalais, J. W., J. Chem. Phys. 75 1735 (1981).10.1063/1.442251Google Scholar
9. Yamamoto, A., Tsujino, M., Ohkubo, M., and Hashimoto, A., J. Cryst. Growth 137, 415 (1994).10.1016/0022-0248(94)90979-2Google Scholar
10. Noh, D. Y., Hwu, Y., Kim, H. K., and Hong, M., Phys. Rev. B 51, 4441 (1995).10.1103/PhysRevB.51.4441Google Scholar
11. Kim, C., and Robinson, I. K., Appl. Phys. Lett. 69, 2358 (1996).10.1063/1.117524Google Scholar
12. Hiramatsu, K., Detchprohm, T., and Akasaki, I., Jpn. J. Appl. Phys. 32, 1528 (1993).10.1143/JJAP.32.1528Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Nitridation Of Sapphire Substrate Using Remote Plasma Enhanced-Ultrahigh Vacuum Chemical Vapor Deposition At Low Temperature
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Nitridation Of Sapphire Substrate Using Remote Plasma Enhanced-Ultrahigh Vacuum Chemical Vapor Deposition At Low Temperature
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Nitridation Of Sapphire Substrate Using Remote Plasma Enhanced-Ultrahigh Vacuum Chemical Vapor Deposition At Low Temperature
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *