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New Wet Cleaning Strategies for Obtaining Highly Reliable thin Oxides

Published online by Cambridge University Press:  21 February 2011

M.M. Heyns
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
S. Verhaverbeke
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Meuris
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
P.P. Mertens
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Schmidt
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Kubota
Affiliation:
Sony Corp., Asahi-cho, Atsugi-shi, Kanagawa-ken, Japan
A. Philipossian
Affiliation:
Digital Equipment Corporation, 77 Reed Road, Hudson, MA 01749, USA
K. Dillenbeck
Affiliation:
Ashland Chemical Inc., P.O. Box 2219, Columbus, Ohio 43216, USA
D. GRäF
Affiliation:
Wacker-Chemitronic, P.O. Box 1140, D-8263 Burghausen, Germany
A. Schnegg
Affiliation:
Wacker-Chemitronic, P.O. Box 1140, D-8263 Burghausen, Germany
R. de Blank
Affiliation:
ASM International, Rembrandtlaan 2A, 3723 BJ Bilthoven, The, Netherlands
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Abstract

The effect of metal contamination and silicon surface defects on the gate oxide yield is investigated. The characteristics of various cleaning procedures are studied and correlated with the integrity of thin gate oxides. The standard wet cleaning recipe is optimized and a new cleaning strategy is proposed. Selective contamination experiments in chemicals and on Siwafers are used to investigate the effect of small amounts of metal contaminants on the gate oxide integrity. It is found that the characteristics of the silicon substrate play a dominant role in this. HF-last processes are investigated and a new wet cleaning strategy is proposed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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New Wet Cleaning Strategies for Obtaining Highly Reliable thin Oxides
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