Skip to main content Accessibility help
×
Home
Hostname: page-component-78bd46657c-2pqp7 Total loading time: 0.397 Render date: 2021-05-07T04:27:27.300Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

A New Transfer Technique for Graphene Deposited by CVD on Metal Thin Films

Published online by Cambridge University Press:  22 May 2014

G. Amato
Affiliation:
The Quantum Research Laboratory, INRIM, strada delle Cacce 91, I-10135, Torino, Italy
E. Simonetto
Affiliation:
The Quantum Research Laboratory, INRIM, strada delle Cacce 91, I-10135, Torino, Italy Dept. of Applied Science and Technology, Polytechnic of Turin, Corso Duca degli Abruzzi 24, I-10129, Torino, Italy
L. Croin
Affiliation:
The Quantum Research Laboratory, INRIM, strada delle Cacce 91, I-10135, Torino, Italy Dept. of Applied Science and Technology, Polytechnic of Turin, Corso Duca degli Abruzzi 24, I-10129, Torino, Italy
E. Vittone
Affiliation:
Physics Dept. and NIS center, University of Turin, Via Pietro Giuria 1, I-10125, Torino, Italy.
Get access

Abstract

Chemical Vapor Deposition of graphene on metallic substrates is one of the most attracting techniques for large area graphene production. The technique widely employed for transferring graphene to other substrates involves deposition of a polymer support with subsequent etching of the metal substrate. Here we report a safer transfer process, which requires a two-step PMMA deposition and bonding under pressure. Sheets of graphene before and after transfer have been both characterized by Raman spectroscopy, and show comparable quality, indicating that the proposed technique does not introduce additional defects in graphene.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below.

References

Reina, A., Jia, X., Ho, J., Nezich, D., Son, H., Bulovic, V., Dresselhaus, M. S., and Kong, J., Nano Lett., vol. 9, no. 1, pp. 3035, (2009).CrossRef
Li, X., Cai, W., An, J., Kim, S., Nah, J., Yang, D., Piner, R., Velamakanni, A., Jung, I., Tutuc, E., Banerjee, S. K., Colombo, L., and Ruoff, R. S., Science, vol. 324, no. 5932, pp. 13121314, (2009).CrossRef
Bae, S., Kim, H., Lee, Y., Xu, X., Park, J.-S., Zheng, Y., Balakrishnan, J., Lei, T., Ri Kim, H., Song, Y. I., Kim, Y.-J., Kim, K. S., Özyilmaz, B., Ahn, J.-H., Hong, B. H., and Iijima, S., Nat. Nanotechnol., vol. 5, no. 8, pp. 574578, (2010).CrossRef
Kobayashi, T., Bando, M., Kimura, N., Shimizu, K., Kadono, K., Umezu, N., Miyahara, K., Hayazaki, S., Nagai, S., and Mizuguchi, Y., Appl. Phys. Lett., vol. 102, no. 2, pp. 023112–023112, (2013).CrossRef
Bajpai, R., Roy, S., Jain, L., Kulshrestha, N., Hazra, K. S., and Misra, D. S., Nanotechnology, vol. 22, no. 22, p. 225606, (2011).CrossRef
Gao, L., Ni, G.-X., Liu, Y., Liu, B., Castro Neto, A. H., and Loh, K. P., Nature, vol. 505 pp 190194, (2013).CrossRef
Zhu, X., Liu, G., Guo, Y., and Tian, Y., Microsyst. Technol., vol. 13, no. 3–4, pp. 403407, (2006).CrossRef
Tao, L., Lee, J., Chou, H., Holt, M., Ruoff, R. S., and Akinwande, D., ACS Nano, vol. 6, no. 3, pp. 23192325, (2012).CrossRef
Croin, L., Milano, G., Vittone, E., and Amato, G., this volume, (2013).
Piazzi, M., Croin, L., Vittone, E., and Amato, G., SpringerPlus, vol. 1, no. 1, p. 52, (2012).CrossRef
Ferrari, A. C. and Basko, D. M., Nat. Nanotechnol., vol. 8, no. 4, pp. 235246, (2013).CrossRef
Thomas, K. J., Sheeba, M., Nampoori, V. P. N., Vallabhan, C. P. G., and Radhakrishnan, P., J. Opt. Pure Appl. Opt., vol. 10, no. 5, p. 055303, (2008).CrossRef
Perdereau, J. and Rhead, G. E., Surf. Sci., vol. 24, no. 2, pp. 555571, (1971).CrossRef
Tombros, N., Veligura, A., Junesch, J., van den Berg, J. Jasper, Zomer, P. J., Wojtaszek, M., Vera Marun, I. J., Jonkman, H. T., van Wees, B. J., J. of Appl. Phys., 109, pp. 093702, (2011).CrossRef

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

A New Transfer Technique for Graphene Deposited by CVD on Metal Thin Films
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

A New Transfer Technique for Graphene Deposited by CVD on Metal Thin Films
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

A New Transfer Technique for Graphene Deposited by CVD on Metal Thin Films
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *