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New Substrate/Buffer Layer Compounds for Epitaxial HTSC Film Growth

Published online by Cambridge University Press:  15 February 2011

A. Tauber
Affiliation:
GEO-CENTERS, INC. 615 Hope Road, Eatontown, NJ 07724
S. C. Tidrow
Affiliation:
U.S.Army Research Laboratory Physical Sciences Directorate Fort Monmouth, N.J. 07703
W. D. Wilber
Affiliation:
U.S.Army Research Laboratory Physical Sciences Directorate Fort Monmouth, N.J. 07703
R. D. Finnegan
Affiliation:
U.S.Army Research Laboratory Physical Sciences Directorate Fort Monmouth, N.J. 07703
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Abstract

A series of compounds in the system A4MeSb13O12 where A=Ba, Sr and Me=Li, Na &K were prepared by solid state reaction at elevated temperature. A new form of Sr4NaSb3O12 was prepared. The compounds were characterized with regard to their lattice parameters, density and dielectric properties. Thin films were prepared by PLD from dense targets and epitaxial relationships identified between YBCO and these compounds.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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New Substrate/Buffer Layer Compounds for Epitaxial HTSC Film Growth
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