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A New Self-Aligned A-SI TFT Using Ion Doping and Chromium Silicide Formation

Published online by Cambridge University Press:  21 February 2011

S. Nishida ,
H. Uchida  and
S. Kaneko
S. Nishida
Affiliation:
Functional Devices Research Laboratories, NEC Corporation, 4–1–1 Miyazaki Miyamae-ku Kawasaki, Kanagawa 216, Japan
H. Uchida
Affiliation:
Functional Devices Research Laboratories, NEC Corporation, 4–1–1 Miyazaki Miyamae-ku Kawasaki, Kanagawa 216, Japan
S. Kaneko
Affiliation:
Functional Devices Research Laboratories, NEC Corporation, 4–1–1 Miyazaki Miyamae-ku Kawasaki, Kanagawa 216, Japan
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Abstract

A new self-aligned a-Si TFT has been developed. Ion doping and chromium silicide (CrSix) formation technique was used to fabricate source and drain, which are self-aligned to the gate electrode, instead of using the previously reported lift-off process. The fabricated TFT mobility is about 0.5cm2/V' sec and threshold voltage is about 3V. The ON/OFF ratio is over 106. The actions of as short as 2μm channel TFT have been confirmed, using a large area TFT process. These results show that this technique can be applicable to manufacturing high quality TFT-LCDs in a large area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 303
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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