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A New Poly-Si TFT Employing XeCl Excimer Laser Annealing with Pre-patterned Al Laser Beam Mask

Published online by Cambridge University Press:  17 March 2011

Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone : +82-2-880-7248, Fax : +82-2-883-0827, E-mail : mkh@emlab.snu.ac.kr
Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone : +82-2-880-7248, Fax : +82-2-883-0827, E-mail : mkh@emlab.snu.ac.kr
Jae-Hong Jeon
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone : +82-2-880-7248, Fax : +82-2-883-0827, E-mail : mkh@emlab.snu.ac.kr
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Abstract

We report new lateral grain growth mechanism by XeCl excimer laser annealing on a-Si film with pre-patterned Al layer. 2000Å-thick Al pattern on 800Å-thick PECVD a-Si film successfully reflects the incident laser beam and results in temperature gradient during the recrystallization process. The TEM images show that grain growth near the boundary between the liquid and the solid region exhibits a different mechanism compared with the conventional ELA. About 1.5 m-long lateral grain has been successfully obtained by single laser irradiation

A poly-Si TFT with single grain boundary in the channel has been fabricated by the proposed excimer laser annealing. An excellent device characteristics such as mobility more than 250cm2/Vsec, high On/Off current ratio of 6.3×106 and low threshold voltage less than 1 V has been obtained. The experimental results show that the mobility, threshold voltage and sub-threshold slope of proposed TFTs are superior to those of the conventional TFTs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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