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New Crucible Design for SiC Single Crystal Growth by Sublimation

Published online by Cambridge University Press:  21 March 2011

Shin-ichi Nishizawa
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, 305-8568 Japan
Hirotaka Yamaguchi
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, 305-8568 Japan
Tomohisa Kato
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, 305-8568 Japan
M. Nasir Khan
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, 305-8568 Japan
Kazuo Arai
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, 305-8568 Japan
Naoki Oyanagi
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body Association for Future Electron Devices, c/o Electrotechnical Laboratory
Yasuo Kitou
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body Association for Future Electron Devices, c/o Electrotechnical Laboratory
Wook Bahng
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body Association for Future Electron Devices, c/o Electrotechnical Laboratory
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Abstract

SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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New Crucible Design for SiC Single Crystal Growth by Sublimation
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