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New conductive IBAD buffer for HTS applications

Published online by Cambridge University Press:  18 March 2011

Karola Thiele
Affiliation:
Institut fuer Materialphysik, Windausweg 2, 37073 Goettingen, Germany
Sibylle Sievers
Affiliation:
Institut fuer Materialphysik, Windausweg 2, 37073 Goettingen, Germany
Juergen Dzick
Affiliation:
Zentrum fuer Funktionswerkstoffe, Windausweg 2, 37073 Goettingen, Germany
Lars-Oliver Kautschor
Affiliation:
Institut fuer Materialphysik, Windausweg 2, 37073 Goettingen, Germany
Christian Jooss
Affiliation:
Institut fuer Materialphysik, Windausweg 2, 37073 Goettingen, Germany
Joerg Hoffmann
Affiliation:
Zentrum fuer Funktionswerkstoffe, Windausweg 2, 37073 Goettingen, Germany
Herbert C. Freyhardt
Affiliation:
Institut fuer Materialphysik, Windausweg 2, 37073 Goettingen, Germany Zentrum fuer Funktionswerkstoffe, Windausweg 2, 37073 Goettingen, Germany
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Abstract

Biaxially aligned Indium Tin Oxide (ITO) thin films to be used as electrically conductive buffer layers were prepared by an Ion-Beam Assisted Deposition (IBAD) process on various substrates. Two Kaufman ion sources with 2.5 cm diameter were employed for the assisting and the sputtering beam, respectively. All deposited films revealed (001) oriented film growth with a strong in-plane alignment. The degree of the in-plane orientation was studied depending on the ion-beam parameters and the incident angle. Investigations (TEM and X-ray) of the texture evolution of these IBAD films during film growth were carried out. An in-plane texture of 12.6°FWHM for a 1 μm thick film has been achieved so far. The quality of the buffer has been demonstrated by the subsequent deposition of high-current carrying YBCO-films deposited by thermal coevaporation using a 3–5 nm thick Y2O3 interlayer. A jc of 0.76 MA/cm2 (77K, 0T) has been obtained for a 1 cm × 1 cm sample with ITO of 20° FWHM.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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