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New Approach Towards The Deposition of I-III-VI Thin Films

Published online by Cambridge University Press:  21 March 2011

Mohammad Afzaal ,
David Crouch ,
Paul O'Brien  and
Jin-Ho Park
Mohammad Afzaal
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. jin-ho.park@man.ac.uk; paul.obrien@man.ac.uk
David Crouch
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. jin-ho.park@man.ac.uk; paul.obrien@man.ac.uk
Paul O'Brien
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. jin-ho.park@man.ac.uk; paul.obrien@man.ac.uk
Jin-Ho Park
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. jin-ho.park@man.ac.uk; paul.obrien@man.ac.uk
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Abstract

The ternary chalcopyrite semiconductor Cu(In/Ga)(Se/S)2 is currently used as an absorber layer in high efficiency thin film solar cells. In this study, various types of I-III-VI (I = Cu, III = Ga or In, VI = S or Se) thin films (CuGaS2, CuInS2 and CuInSe2) were prepared from a series of organometallic precursors, M[(S/Se)2CNMeR]n (M = Cu, In, Ga; R = alkyl) by aerosol-assisted chemical vapour deposition (AACVD). In contrast to the metal alkyl compounds, MR3 (M = In and Ga; R = alkyl), which are pyrophoric, the precursors are easy to synthesize by one-pot reactions and are air stable. The optimum growth temperature for the preparation of these films on glass substrates using aerosol-assisted chemical vapour deposition (AACVD) was found to be above 400 °C in terms of crystallinity, although deposition does occur at lower temperatures. The films have been characterised using XRPD, SEM and EDS. SEM analyses show all films are microcrystalline. XRPD results show evidence of the crystalline nature of theses films. The results of this comprehensive study are presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.8.1
Copyright
Copyright © Materials Research Society 2002

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References

[1] Igarashi, O., J. Cryst. Growth 130, 343 (1993).Google Scholar
[2] Sagnes, B., Salesse, A., Artaud, M. C., Duchemin, S., Bougnot, J. and Bougnot, G., J. Cryst. Growth 124, 620 (1992).Google Scholar
[3] Ouchin, F., Gallon, P., Artaud, M. C., Bougnot, J. and Duchemin, S., Cryst. Res. Technol. 31, S513 (1996).Google Scholar
[4] Jones, P. A., Jackson, A. D., Lickiss, P. D., Pilkington, R. D. and Tomlinson, R. D., Thin Solid Films 238, 4 (1994).Google Scholar
[5] Chichibu, S., Appl. Phys. Letter. 70, 1840 (1997).Google Scholar
[6] Nomura, R., Seki, Y., Konishi, K. and Matsuda, H., Appl, Organomet. Chem. 6, 685 (1992).Google Scholar
[7] Nomura, R., Seki, Y. and Matsuda, H., J. Mater. Chem. 2, 765 (1992).Google Scholar
[8] Hollingsworth, J. A., Hepp, A. F. and Buhro, W. E., Chem. Vap. Deposition 5, 105 (1999).Google Scholar
[9] Hursthouse, M. B., Malik, M. A., Motevalli, M. and O'Brien, P., J. Mater. Chem. 2, 949 (1992).Google Scholar
[10] Motevalli, M., O'Brien, P., Walsh, J. R. and Watson, I. M., Polyhedron 15, 2801 (1996),.Google Scholar
[11] O'Brien, P., Walsh, J. R., Waston, I. M., Hart, L. and Silva, S. R. P., J. Cryst. Growth 167, 133 (1996).Google Scholar
[12] Haggata, S. W., Malik, M. A., Motevalli, M., O'Brien, P. and Knowles, J. C., Chem. Mater. 7, 716 (1995).Google Scholar
[13] Lazell, M. R., O'Brien, P., Otway, D. J. and Park, J. -H., Chem. Mater. 11, 3430 (1999).Google Scholar
[14] O'Brien, P., Otway, D. J. and Walsh, J. R, Chem. Vap. Deposition 3, 227 (1997).Google Scholar
[15] O'Brien, P., Otway, D. J. and Park, J. -H., Unpublished results.Google Scholar
[16] McAleese, J., O'Brien, P. and Otway, D. J., Chemical Vap. Deposition 4, 94 (1998).Google Scholar