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A New Approach for Metal Oxide Film Growth: Vapor-Liquid Hybrid Deposition (VALID)

Published online by Cambridge University Press:  11 February 2011

Tetsuji Yasuda
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 4, 1-1–1 Higashi, Tsukuba 305–8562, Japan
Ronald Kuse
Affiliation:
MIRAI Project, Association of Super-Advanced Electronics Technologies (ASET), SCR Bldg., 16–1 Onogawa, Tsukuba 305–8569, Japan
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Abstract

We propose a new process for forming ultra-thin metal oxide films called vapor-liquid hybrid deposition (VALID). This process consists of two steps: i) adsorption of a metal-organic or metal-halide precursor from the gas phase, and ii) liquid-phase hydrolysis of the adsorbed precursors. Al2O3 films were grown using Al(CH3)3 and water. Growth rate was 0.18 nm per cycle at room temperature. The interface layer thickness was less than 1 nm after post-deposition annealing in vacuum at 750°C. C-V and I-V characteristics of Au/Al2O3/Si capacitors fabricated using VALID were well-behaved suggesting that this concept is a viable approach to form device-quality dielectrics.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

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