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A New Annealing Method to Obtain High Quality Poly-Si

Published online by Cambridge University Press:  28 February 2011

Yoon-Ho Song
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8 Daedog Science Town, Daejeon, Korea
Jong-Tae Baek
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8 Daedog Science Town, Daejeon, Korea
Kee-Soo Nam
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8 Daedog Science Town, Daejeon, Korea
Sang-Won Kang
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8 Daedog Science Town, Daejeon, Korea
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Abstract

A new annealing method, a combination of rapid thermal annealing (RTA) and furnace annealing, has been developed to obtain a high quality poly-Si from a-Si deposited by LPCVD. This method produces a large grain poly-Si with good uniformity, which may result from the growth of relatively defect-free nucleus generated at a high temperature by RTA. Poly-Si thin film transistors fabricated by this new annealing method have higher field effect mobility and better uniformity compared with those by the conventional furnace annealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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