Hostname: page-component-7c8c6479df-27gpq Total loading time: 0 Render date: 2024-03-29T00:24:22.916Z Has data issue: false hasContentIssue false

A New Annealing Method to Obtain High Quality Poly-Si

Published online by Cambridge University Press:  28 February 2011

Yoon-Ho Song
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8 Daedog Science Town, Daejeon, Korea
Jong-Tae Baek
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8 Daedog Science Town, Daejeon, Korea
Kee-Soo Nam
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8 Daedog Science Town, Daejeon, Korea
Sang-Won Kang
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8 Daedog Science Town, Daejeon, Korea
Get access

Abstract

A new annealing method, a combination of rapid thermal annealing (RTA) and furnace annealing, has been developed to obtain a high quality poly-Si from a-Si deposited by LPCVD. This method produces a large grain poly-Si with good uniformity, which may result from the growth of relatively defect-free nucleus generated at a high temperature by RTA. Poly-Si thin film transistors fabricated by this new annealing method have higher field effect mobility and better uniformity compared with those by the conventional furnace annealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Morozumi, S., Oguchi, K., Yazawa, S., Kodaira, T., Ohshima, H. and Mano, T., SID international Symposium Digest of Technical Papers (Society for Information Display, Philadelphia, 1983), p. 156.Google Scholar
2. Kinugawa, M., Kakamu, M., Yoshida, T., Nakayama, T., Morita, S., Kubota, K., Matsuoka, F., Oyamatsu, H., Ochii, K. and Maeguchi, K., 7990 Symposium on VLSI Technology Digest of Technical Papers (IEEE, Honolulu, 1990), p.23.Google Scholar
3. Kamins, T. I. and Marcoux, P. J.: IEEE Electron Device Lett. EDL–1, 159 (1980).Google Scholar
4. Iverson, R. B. and Reif, R., J. Appl. Phys. 62, 1675 (1987).Google Scholar
5. Morita, Y. and Noguchi, T., Jpn. J. Appl. Phys. 28, L309 (1989).Google Scholar
6. Nakamura, A., Emoto, F., Fujii, E., Uemoto, Y., Yamamoto, A., Senda, K. and Kano, G., Jpn. J. Appl. Phys. 27, L2408 (1988).Google Scholar
7. Levinson, J., Shepherd, F. R., Scanion, P. J., Westwood, W. D., Este, G. and Rider, M., J. Appl. Phys. 53, 1193 (1982).Google Scholar
8. Wu, I-Wei, Huang, Tiao-Yuan, Jackson, Warren B., Lewis, Alan G. and Chiang, Anne, IEEE Electron Device Lett. EDL–12, 181 (1991).Google Scholar