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Narrow Band Gap Amorphous Silicon-Based Solar Cells Prepared by High Temperature Processing

Published online by Cambridge University Press:  10 February 2011

M. Kambe
Affiliation:
Depertment of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Y. Yamamoto
Affiliation:
Depertment of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
K. Fukutani
Affiliation:
Depertment of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
T. Kamiya
Affiliation:
Depertment of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
C.M. Fortmann
Affiliation:
Depertment of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
I. Shimizu
Affiliation:
Depertment of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Abstract

Generally higher depositions temperatures are required to prepare solar cells with narrow band gap amorphous silicon intrinsic layers. High processing temperatures require that diffusion resistant substrates and doped layer materials be developed. In the case of p-i-n solar cells both a new Ga-doped ZnO and/or semi-transparent Cr over-coated standard commercially available TCO show increased resistance to high temperature processing and it is possible to prepare efficient solar cells on these substrates at temperatures over 280 C. In most amorphous silicon i-layer cases a-SiC:H p-layers offer better diffusion resistance than microcrystalline players. However, in the case of narrow band gap amorphous silicon prepared at high temperatures using the argon treatment process [2] micro-crystalline p-layers offer significantly improved solar cell performance. Another promising approach involves the n-i-p deposition sequence, however, this case too can suffer from diffusion related problems.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1 Futako, W., et al. , Proc. of the 26th IEEE Photovoltaic Specialists Conference, (1997) IEEE Press, Picataway, NY, 581 Google Scholar
2 Kukutani, K., et al. , elsewhere in these proceedingsGoogle Scholar
3 Yamamoto, Y., et al. elsewhere in these proceedingsGoogle Scholar
4 Ikeda, Toru, et al. Solar Energy Materials and Solar Cells 34 (1994) 379384 CrossRefGoogle Scholar
5 Winz, K., et al. , Mat. Res. Soc. Syrup. Proc. Vol.420, (1996) Materials Research Society, Pittsburgh, PA p. 819 Google Scholar
6 Guha, S., et al. , Appl. Phys. Lett. 49, 218 (1996)CrossRefGoogle Scholar

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