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Multiply Scanned Electron Beam Annealing of Si Implanted GaAs
Published online by Cambridge University Press: 15 February 2011
Abstract.
Experimental results obtained by multiply-scanned electron beam annealing (MEBA) of Si implanted semi-insulating GaAs are presented and compared with results obtained by thermal annealing. A tentative model for Cr redistribution during MEBA treatment is presented which can explain the 100% activation without compensation threshold and the high drift mobility obtained for low Si doses, almost independent of the Cr content of the crystal.
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- Copyright © Materials Research Society 1982
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