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A Multilevel Metal Interconnect Technology with Intra-Metal Air-Gap for Quarter-Micron-and-Beyond High-Performance Processes

Published online by Cambridge University Press:  17 March 2011

Mark Lin
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan United Semiconductor Corp., Science-Based Industrial Park, Hsinchu, Taiwan
Chun-Yen Chang
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan
Tiao-Yuan Huang
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan Natiomal Nano Device Laboratories, Hsinchu, Taiwan
Mout-Lim Lin
Affiliation:
United Semiconductor Corp., Science-Based Industrial Park, Hsinchu, Taiwan
Horng-Chin Lin
Affiliation:
Natiomal Nano Device Laboratories, Hsinchu, Taiwan
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Abstract

A multilevel metal interconnect with air-gap has been developed to reduce RC delay time for quick turn-around-time foundry manufacturing. The air-gap method has been successfully applied to 0.25 νm foundry technology. Measurements on ring oscillators confirm that the smallest delay time is indeed achieved with the air-gap method, compared with that using either conventional high-density-plasma (HDP) oxide or low-dielectric-constant spin-on-glass (SOG). In addition, we have also developed fitting equations for the delay time, thus provide a handy method for predicting the RC delay time. The oscillator delay time is also found to be critically dependent on not only the size, but also the position of the air-gap. Best delay time reduction is obtained when the air-gap is positioned in extended both above and below the metal lines to effectively reduce the fringing capacitance.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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