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Morphology of Ti37Al63 Thin-Films Deposited by Magnetron Sputtering
Published online by Cambridge University Press: 17 March 2011
Abstract
TiAl based thin-films possess high oxidation-resistance and high melting points, making them possible candidates for application in electronics. The behavior of the films upon exposure to various temperatures is of interest for such application. In the present study, Ti37Al63 thin films were deposited onto SiO2 substrates using RF magnetron sputtering from a compound target. Anneals were performed in vacuum at temperatures ranging from 400 °C to 700 °C. The phases and microstructural behavior of the films were evaluated as a function of annealing. Microstructural behavior was correlated with resistivity changes in the films. The behavior of Ti-Al films as potential under-layers for silver metallization was also evaluated. The Ti-Al was observed to enhance the thermal stability of pure Al thin-films. The results are relevant for potential application of the films to electronics.
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- Copyright © Materials Research Society 2004