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Mombe Growth of GaP and its Efficient Photoeniiancement at Low Temperatures
Published online by Cambridge University Press: 25 February 2011
Abstract
GaP epllayers grown at temperatures ranging from 420 to 500°C had smooth surfaces and streaky RHEED patterns. The decomposition of group-III sources of TEGa limits the growth rates of GaP at lower substrate temperatures(<390 °C ). The growth rate of GaP epitaxial layers was efficiently enhanced by N2∼laser irradiation at lower substrate temperatures.
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- Copyright © Materials Research Society 1992