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Molecular Beam Epitaxy Study of InAs/GaSb Heteroepitaxy on The (111)A and (111)B Orientations

Published online by Cambridge University Press:  25 February 2011

J. A. Dura ,
J. T. Zborowski  and
T. D. Golding
J. A. Dura
Affiliation:
Department of Physics and Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204
J. T. Zborowski
Affiliation:
Department of Physics and Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204
T. D. Golding
Affiliation:
Department of Physics and Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204
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Abstract

We have investigated the molecular beam epitaxial growth of homoepitaxial InAs and GaSb and InAs/GaSb heterostructures on both the (111)A and (111)B orientations. Our studies have found that high quality GaSb epilayers can be grown on both the (111)A and (111l)B orientations over a wide range of growth temperatures and flux ratios. Reflection high energy electron diffr-action phase diagrams for GaSb [111[ are presented. InAs/GaSb heterostructures, simultaneously grown on (11l)A and (111)B orientations, have been investigated by secondary ion mass spectroscopy depth profiles and double crystal x-ray diffraction. Unintentional incorporation of the ‘second’ group-V element is found to be approximately three times greater in the (111)A orientation than in the (111)B for both species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 35
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1 Sakaki, H., Chang, L. L., Chang, C. A., Sai-Halash, G. A., and Esaki, L., Appl. Phys. Lett. 31, 211 (1977).Google Scholar
2 Chang, L. L. and Esaki, L., Surf. Sci. 98, 70 (1980).Google Scholar
3 Chang, L. L., Kawai, N., Sai-Halash, S. A., Ludeke, R., and Esaki, L., Appl. Phys. Lett. 35, 939 (1979).Google Scholar
4 Mailhiot, C. and Smith, D. L., J. Vac. Sci. Technol. B5, 1268 (1987)Google Scholar
5 Tuttle, G., Kroemer, H., and English, J. H., J. Appl. Phys. 67, 3032 (1990).Google Scholar
6Ionization efficiencies were estimated by the formula: η = 0.6 (∑Zi/14) + 0.4.Google Scholar
7 Noreika, A. J., Francombe, M. H., and Wood, C. E. C., J. Appl. Phys. 52, 7416 (1981).Google Scholar
8 Fan, W. C., Zborowski, J. T., Golding, T. D., and Shih, H. D., J. Appl. Phys. 71, 2249 (1992).Google Scholar
9 Zborowski, J.T., Fan, W. C., Golding, T. D., Vigliante, A., and Chow, P. C., J. Appl. Phys. (accepted for publication).Google Scholar
10 Golding, T. D., Shih, H. D., Zborowski, J. T., Fan, W. C., Chow, P. C., Vigliante, A., Covington, B. C., Chi, A., Anthony, J. M., and Schaake, H. F., J. Vac. Sci. Technol. (accepted for publication).Google Scholar