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Molecular Beam Epitaxy Growth and Structural Characterization of Si/GaAs Superlattices

Published online by Cambridge University Press:  25 February 2011

R.J. Matyi
Dept. of Materials Science and Engineering
H.J. Gillespie
Materials Science Program, University of Wisconsin, Madison, WI 53706
G.E. Crook
Dept. of Electrical and Computer Engineering
J.K. Wade
Materials Science Program, University of Wisconsin, Madison, WI 53706
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The growth of high quality Si/GaAs superlattices on GaAs substrates using molecular beam epitaxy is described. A typical superlattice structure consisted of ten periods of thin (<5Å) layers of pseudomorphic silicon alternating with thick GaAs layers; typical GaAs thicknesses range from 100Å to 1850Å. In situ reflection high energy electron diffraction analysis of the structures during growth showed the silicon layers developed a (3 ×1) reconstruction, while the GaAs exhibited a (4×2)→(3×2)→(3×1)→(2×4) reconstruction sequence. Both observations agree with prior studies of the growth of embedded silicon in GaAs/Si/GaAs heterostructures. X-ray diffraction using the (004) reflection showed sharp and intense satellite peaks (out to 22 orders in one case), indicating a high level of structural quality. Very good agreement has been obtained between observed diffraction patterns and those calculated via dynamical simulation.

Research Article
Copyright © Materials Research Society 1992

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