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Modulation of Growing Surface with Atomic Hydrogen and Excited Argon to Fabricate Narrow Gap a-Si:H

Published online by Cambridge University Press:  10 February 2011

W. Futako
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama, Japan 226
I. Shimizu
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama, Japan 226
C. M. Fortmann
Affiliation:
State University of New York at Stony Brook, Department of Applied Mathematics and Statistics, Stony Brook, NY, 11794-3600
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Abstract

Hydrogenated amorphous silicon (a-Si:H) with a gaps narrower than 1.7 eV were made by repeating the deposition of a thin layer (1–3 nm thick) and the treatment of growing surface with a mixture of H and Ar*. Crystallization induced by permeation of hydrogen into the subsurface at high substrate temperature (>200C) was efficiently prevented by treating with a mixture of H and Ar*. The activation of growing surface may arise from releasing a part of hydrogen on surface by treating with Ar*. High quality a-Si:H films containing hydrogen of 3 atom % with a gap of 1.6 eV were made by chemical annealing with a mixture of H and Ar*.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1: Nakamura, K., Yoshino, K., Takeoka, S. and Shimizu, I., Jpn.J.Appl.Phys. 34, 442(1995)CrossRefGoogle Scholar
2: Shirai, H., Das, D., Hanna, J. and Shimizu, I., Appl.Phys.Lett.,59,1096 (1991)CrossRefGoogle Scholar
3: Shirai, H., Hanna, J. and Shimizu, I., Mat. Res. Soc. Symp. Proc., 219, 643 (1991)CrossRefGoogle Scholar
4: Futako, W., Yoshino, K., Nakamura, K., Fortmann, C.M. and Shimizu, I. J.Non-Cryst.Solids (in press)Google Scholar
5: Yoshino, K., Futako, W., Wasai, Y. and Shimizu, I., MRS Spring Meeting (San Fransicso, 1996) submittedGoogle Scholar

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Modulation of Growing Surface with Atomic Hydrogen and Excited Argon to Fabricate Narrow Gap a-Si:H
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