Skip to main content Accessibility help
×
Home
Hostname: page-component-564cf476b6-2fphr Total loading time: 0.153 Render date: 2021-06-20T11:09:39.679Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Modification of The Near-Surface Region Of Al2O3 By Ion Implantation *

Published online by Cambridge University Press:  21 February 2011

C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
G. C. Farlow
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
H. Naramoto
Affiliation:
JAERI, Tokai-mura, Japan
C. J. Mchargue
Affiliation:
Metals and Ceramics Division, ORNL
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
Get access

Abstract

Physical and structural property changes resulting from ion implantation and thermal annealing of α-A12O3 are reviewed. Emphasis is placed on damage production during implantation, damage recovery during thermal annealing, and impurity incorporation during thermal annealing. Physical and structural property changes caused by ion implantation and annealing are correlated with changes in the mechanical properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below.

Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

1. See for example, Ion Implantation in Semiconductors, ed. by Chernov, F., Borders, J. A. and Brice, D. K., Plenum Press, New York, 1976.Google Scholar
2. Treatise on Materials Science and Technology, Vol. 18, Ion Implantation, ed. by Hirvonen, J. K., Academic Press, New York, 1980.Google Scholar
2a Also see numerous articles in the Proc. of the 2nd and 3rd Inter. Conf. on Ion Beam Modification of Materials; Proceedings published in Nucl. Instrum. Methods 182/183 (1981) and 209/210 (1983).Google Scholar
3. Arnold, G. W., Krefft, G. B. and Norris, C. B., Appl. Phys. Lett. 25, 540 (1974).CrossRefGoogle Scholar
4. Krefft, G. B., Beezhold, W. and EerNisse, E. P., IEEE Trans. on Nucl. Sci. NS-22, 2247 (1975).CrossRefGoogle Scholar
5. Luera, T. F., Borders, J. A. and Arnold, G. W., in Ion Implantation in Semiconductors, ed. by Chernov, F., Borders, J. A. and Brice, D. K., Plenum Press, New York, 1976, p. 285.Google Scholar
6. Evans, B. D., Hendricks, H. D., Bazzarre, F. D. and Bunch, J. M., Ref. 5, p. 265.Google Scholar
7. McHargue, C. J., Lewis, M. B., Appleton, B. R., Naramoto, H., White, C. W. and Williams, J. M., Proc. Inter. Conf. of the Science of Hard Materials Moren, Wyoming August 24–28, 1981. Google Scholar
8. McHargue, C. J., Naramoto, H., Appleton, B. R., White, C. W. and Williams, J. M., p. 147 in Metastable Materials Formation by Ion Implantation, ed. by Picraux, S. T. and Choyke, W. J., North Holland, New York, 1982.Google Scholar
9. Naramoto, H., White, C. W., Williams, J. M., McHargue, C. J., Holland, O. W., Abraham, M. M., and Appleton, B. R., J. Appl. Phys. 54, 683 (1983).CrossRefGoogle Scholar
10. Naramoto, H., McHargue, C. J., White, C. W., Williams, J. M., Holland, O. W., Abraham, M. M., and Appleton, B. R., Nucl. Instrum. Methods 209/210, 1159 (1983).CrossRefGoogle Scholar
11. McHargue, C. J., White, C. W., Appleton, B. R., Naramoto, H., Farlow, G. C., and Williams, J. M., in Ion Implantation and Ion Beam Processing of Materials, ed. by Hubler, G. K., Holland, O. W., Clayton, C. R., and White, C. W., North Holland, New York, in press.Google Scholar
12. Farlow, G. C., White, C. W., McHargue, C. J., and Appleton, B. R., in Ion Implantation and Ion Beam Processing of Materials, ed. by Hubler, G. K., Holland, O. W., Clayton, C. R., and White, C. W., North Holland, New York, in press.Google Scholar
13. McHargùe, C. J., Lewis, M. B., Appleton, B. R., Naramoto, H., White, C. W., and Williams, J. M., p. 451 in The Science of Hard Materials, ed. by Viswanadham, R.K., Rowcliffe, D. J., and Gurland, J., Plenum Press, New York, 1983.Google Scholar
14. The Stopping and Ranges of Ions in Matter, Vol. 4, ed. by Ziegler, J. F., Pergamon Press, New York, 1977.Google Scholar
15. Burnett, P. J. and Page, T. F., J. Mater. Sci., to be published.Google Scholar
16. Carnera, A., Drigo, A. V., and Mazzoldi, P., Rad. Eff. 49, 29 (1980).CrossRefGoogle Scholar
17. Phase Diagrams for Ceramists, E. Levine, M., Robbins, C. R., McMurdie, H. F. (Am. Ceram. Soc., Columbus, Ohio) 1964, Diagram #310.Google Scholar
18. Phase Diagrams for Ceramists, Levine, E. M., Robbins, C. R., McMurdie, H. F. (Am. Ceram. Soc., Columbus, Ohio) 1969, Diagram #2095.Google Scholar
19. Phase Diagrams for Ceramists, Levine, E. M., Robbins, C. R., McMurdie, H. F. (Am. Ceram. Soc., Columbus, Ohio) 1975, Diagram #4377.Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Modification of The Near-Surface Region Of Al2O3 By Ion Implantation *
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Modification of The Near-Surface Region Of Al2O3 By Ion Implantation *
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Modification of The Near-Surface Region Of Al2O3 By Ion Implantation *
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *