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Modification of Sol-Gel Thin Films By Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Hiroshi Hirashima
Affiliation:
Keio University, Faculty of Science and Technology 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223 Japan
Kenji Adachi
Affiliation:
Keio University, Faculty of Science and Technology 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223 Japan
Hiroaki Imai
Affiliation:
Keio University, Faculty of Science and Technology 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223 Japan
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Abstract

In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the IR absorption band of OH disappeared after Ar+ implantation. Drying and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed with B+ implantation. However, IR absorption bands of B-O bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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