Skip to main content Accessibility help
×
Home
Hostname: page-component-564cf476b6-2fphr Total loading time: 0.426 Render date: 2021-06-19T13:13:50.264Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Modeling of Self-Aligned Silicidation in 2D and 3D: Growth Suppression by Oxygen Diffusion

Published online by Cambridge University Press:  14 March 2011

Victor Moroz
Affiliation:
Avant! Corporation, 46871 Bayside Parkway, Fremont, CA 94538, U.S.A.
Takako Okada
Affiliation:
Toshiba Corporation, Research and Development Center, 1 Komukai-Toshiba-cho, Kawasaki 210, Japan
Get access

Abstract

Stress-strain effects and physical processes during formation of the self-aligned silicides are analyzed. A new model for predictive simulation of the self-aligned silicidation is suggested. The model is based on suppression of diffusion and reaction rate of the silicon atoms inside silicide in the presence of oxygen atoms, injected into silicide from the neighbor oxide regions such as oxide spacer, TEOS at STI (Shallow Trench Isolation) and pad oxide. The model is demonstrated to explain the experimentally observed silicide shape.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Fornara, P. and Poncet, A., International Electron Devices Meeting Technical Digest, 73–76 (1996).Google Scholar
2. Nava, F. Valeri, S., Majni, G., Cembali, A., Pignatel, G. and Queirolo, G., J. Appl. Phys., 52, 66416646 (1981).CrossRefGoogle Scholar
3. Jiang, H., Whitlow, H. J., Ostling, M., Niemi, E., d'Heurle, F. M. and Petersson, C. S., J. Appl. Phys., 65, 567574 (1989).CrossRefGoogle Scholar
4. Russell, S. W., Strane, J. W., Mayer, J. W. and Wang, S. Q., J. Appl. Phys., 76, 257263 (1994).CrossRefGoogle Scholar
5. Oh, Y.-S. and Ward, D. E., International Electron Devices Meeting Technical Digest, 509–512 (1998).Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Modeling of Self-Aligned Silicidation in 2D and 3D: Growth Suppression by Oxygen Diffusion
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Modeling of Self-Aligned Silicidation in 2D and 3D: Growth Suppression by Oxygen Diffusion
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Modeling of Self-Aligned Silicidation in 2D and 3D: Growth Suppression by Oxygen Diffusion
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *