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Modeling and Experiments of Dopant Diffusion and Defects for Laser annealed Junctions and advanced USJ

Published online by Cambridge University Press:  01 February 2011

Taiji Noda
Affiliation:
noda.taiji@jp.panasonic.com, Matsushita Electric Industrial Co., Ltd., Semiconductor Company, 19 Nishikujyo-Kasugacho, Minami-ku, Kyoto, 601-8413, Japan
Wilfried Vandervorst
Affiliation:
Wilfried.Vandervorst@imec.be, IMEC, Kapledreef 75, Leuven, B-3001, Belgium
Susan Felch
Affiliation:
sfelch@sbcglobal.net, Applied Materials, 974 E. Arques Ave. MIS 81280, Sunnyvale, CA, 94085, United States
Vijay Parihar
Affiliation:
Vijay_Parihar@amat.com, Applied Materials, 974 E. Arques Ave. MIS 81280, Sunnyvale, CA, 94085, United States
Christa Vrancken
Affiliation:
vrancken@imec.be, IMEC, Kapledreef 75, Leuven, B-3001, Belgium
Thomas Y. Hoffmann
Affiliation:
thomash@imec.be, IMEC, Kapledreef 75, Leuven, B-3001, Belgium
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Abstract

Laser annealed junctions and advanced ultra shallow junctions are studied in both atomistic modeling and experiments. SIMS and sheet resistance measurement for spike-RTA + Laser annealing show that additional laser annealing after spike-RTA (“+Laser”) improve the dopant activation level without increasing in junction depth. “+Laser” effect become effective in the combination of low spike-RTA temperature and high laser temperature. This effect is significant for As doped layer. Spike-RTA based junction has a limitation in viewpoint of Rs-Xj trade-off. Laser-only annealing is promising candidate to overcome this limitation. Boron diffusion with laser-only annealing is investigated. As atomistic kinetic Monte Carlo modeling show that BnIm complexes and End-of-Range (EOR) defects are formed during sub-millisecond annealing time range. Impact of F co-implant on Boron diffusion and EOR defect evolution during sub-millisecond annealing are also investigated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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