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MOCVD of SrTa2O6 Thin Films for High-k Applications

Published online by Cambridge University Press:  28 July 2011

Stephan Regnery
Affiliation:
IFF - Institut für Festkörperforschung and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, D-52425 Jülich, Germany AIXTRON AG Aachen, Kackertstr. 15-17, D-52072 Aachen, Germany
Reji Thomas
Affiliation:
IFF - Institut für Festkörperforschung and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, D-52425 Jülich, Germany
Hans Haselier
Affiliation:
IFF - Institut für Festkörperforschung and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, D-52425 Jülich, Germany
Peter Ehrhart
Affiliation:
IFF - Institut für Festkörperforschung and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, D-52425 Jülich, Germany
Rainer Waser
Affiliation:
IFF - Institut für Festkörperforschung and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, D-52425 Jülich, Germany
Peer Lehnen
Affiliation:
AIXTRON AG Aachen, Kackertstr. 15-17, D-52072 Aachen, Germany
Stefan Miedl
Affiliation:
AIXTRON AG Aachen, Kackertstr. 15-17, D-52072 Aachen, Germany
Markus Schumacher
Affiliation:
AIXTRON AG Aachen, Kackertstr. 15-17, D-52072 Aachen, Germany
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Abstract

SrTa2O6 thin films with thickness between 6 and 150nm were deposited in a multi-wafer planetary MOCVD reactor combined with a TRIJET® liquid delivery system using a single source precursor, strontium-tantalum-(methoxyethoxy)-ethoxide dissolved in toluene. A rather narrow process window for the deposition of stoichiometric SrTa2O6 was found for this precursor at low pressures and a susceptor temperature around 500°C. Films were grown on Pt/TiO2/SiO2/Si, TiNx/Si, and SiO2/Si substrates. The as-deposited films were X-ray amorphous and could be crystallized by post-annealing at a temperature ≥700°C. The SrTa2O6 phase was dominating within a broad range of compositions (Sr/Ta: 0.4–0.7) and a perovskite type phase was observed for Sr/Ta > 0.7. The electrical properties have been investigated with MIM and MIS capacitors after sputter deposition of Pt top electrodes. The amorphous films had a relative permittivity, ε, in the range of 25–45, and low leakage currents. Crystallized films were investigated with Pt MIM capacitors. For stoichiometric SrTa2O6 the dielectric permittivity reached values of ε = 100–110, but the leakage currents were increased. Remarkably, the permittivity is not very sensitive to deviations from the exact stoichiometry of the SrTa2O6 phase (Sr/Ta: 0.40.7), but a decrease to values of ε = 30–40 is observed along with the phase transition at high Sr contents.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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