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Mocvd Growth Of Single Crystal Znsxsel−x On Si
Published online by Cambridge University Press: 28 February 2011
Abstract
Single crystal ZnSxSel−x films have been grown for the first time on (111) Si substrates by low-pressure MOCVD. The epitaxial films clearly show a passivating effect on silicon solar cells, and act as antireflective coatings. Attempts at incorporating Al as an n-type dopant were unsuccessful as the films remain semi-insulating.
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- Copyright © Materials Research Society 1987
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