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MOCVD Growth of III-V Compounds on Si Using Strained Superlattices

Published online by Cambridge University Press:  25 February 2011

Shiro Sakai
Affiliation:
Department of Electronic and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 Japan
Tetsuo Soga
Affiliation:
Department of Electronics, Nagoya University, Japan
Masanari Takeyasu
Affiliation:
Department of Electronic and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 Japan
Masayoshi Umeno
Affiliation:
Department of Electronic and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 Japan
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Abstract

GaAs and GaAsP with the entire compositional range are grow on Si using an intermediate layer of GaAsP strained superlattices to relax the lattice mismatch. The orientation of the overgrown GaAs layer is found to be determined by the direction of the off-angle of the Si (100) surface. The grown layers are characterized by photoluminescence, x-ray diffraction, electro reflectance and DLTS. GaAs/GaAlAs double heterostructure lasers and GaAsP visible LED's are fabricated on Si substrates. The structural and electronic properties of the grown layers and the device performances are reported in this paper.

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Articles
Copyright
Copyright © Materials Research Society 1986

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References

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