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Microstructures of Luminescent nc-Si by Excimer Laser Annealing of a-Si:H

Published online by Cambridge University Press:  15 February 2011

Xinfan Huang
Affiliation:
Department of Physics and State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, CHINA, kjchen@netra.nju.edu.cn, Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Wei Wu
Affiliation:
Department of Physics and State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, CHINA, kjchen@netra.nju.edu.cn, Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Honghui Shen
Affiliation:
Department of Physics and State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, CHINA, kjchen@netra.nju.edu.cn, Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Wei Li
Affiliation:
Department of Physics and State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, CHINA, kjchen@netra.nju.edu.cn, Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Xiaoyuan Chen
Affiliation:
Department of Physics and State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, CHINA, kjchen@netra.nju.edu.cn, Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Jun Xu
Affiliation:
Department of Physics and State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, CHINA, kjchen@netra.nju.edu.cn, Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Kunji Chen
Affiliation:
Department of Physics and State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, CHINA, kjchen@netra.nju.edu.cn, Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
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Abstract

We have reported for the first time on visible photoluminescence (PL) in crystallized a-Si:H/a-SiNx:H multilayer structures by CW Ar ion laser annealing treatments. In this paper we present new results on visible PL from crystallized a-Si:H by using KrF excimer pulse laser (wavelength 248 nm) irradiating treatments. The transmission electron microscopy and Raman scattering studies reveal the microstructures of crystallized Si films, which depend on the pulse number and the pulse energy density of KrF laser. When the laser pulse energy density is higher than 520 mJ/cm2, the nanosized Si crystallites (nc-Si) can be formed from a-Si:H layers with a thickness of 100 nm and strong PL with a peak wavelength of 610 nm has been observed at room temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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