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Microstructure and Integrity of Thin Silicon Films on Sio2 after Immersion in 10:1 Buffered HF

Published online by Cambridge University Press:  01 January 1993

Rama I. Hegde
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Inc., Austin, Texas 78721
Mark A. Chonko
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Inc., Austin, Texas 78721
Philip J. Tobin
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Inc., Austin, Texas 78721
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Abstract

The microstructure and integrity of thin silicon films on SiO2 after immersion in 10:1 buffered HF solution were investigated by AES, AFM and TEM measurements. Silicon films of 30 nm - 50 nm thicknesses were deposited on 15 nm of thermal oxide by LPCVD using SiH4 at 550 °C, 580 °C and 625 °C. These films were then treated with the HF for 15 seconds and characterized systematically. The data provided direct physical evidence for etching of gate oxide by the HF solution through defects (holes) in the 580 °C Si film.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

[1] Hegde, R. I., Chonko, M. A. and Tobin, P. J., MRS Fall Meeting 1992 and references therein.Google Scholar
[2] Hegde, R. I., Chonko, M. A. and Tobin, P. J., Reliability of Semiconductor Devices, Interconnects and Thin Insulator Material, Spring ECS, 93–1, (1993) 575.Google Scholar
[3] Chonko, M., Vandenberg, D. and Keitz, D., Second International Symp. on Physics and Chemistry of SiO2 and Si/SiO2 Interface, Spring ECS, 92-1, (1992) 390.Google Scholar

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