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Microstructural Investigations of Hafnium Aluminum Oxide Films

Published online by Cambridge University Press:  01 February 2011

Doina Craciun
Affiliation:
doinacraciun03@hotmail.com, NILPRP, Lasers, STR. ATOMISTILOR NR. 409, C.P. MG 35, MAGURELE, Bucharest, 077125, Romania, +40214574491
Gabriel Socol
Affiliation:
gabriel.socol@inflpr.ro, National Institute for Laser, Plasma and Radiation Physics, Bucharest, 077125, Romania
Emanuel Axente
Affiliation:
emanuel.axente@inflpr.ro, National Institute for Laser, Plasma and Radiation Physics, Bucharest, 077125, Romania
Aurelian-Catalin Galca
Affiliation:
ac_galca@infim.ro, National Institute of Materials Physics, Bucharest, 077125, Romania
Rajiv Singh
Affiliation:
rsing@mse.ufl.edu, University of Florida, Gainesville, FL, 32611, United States
Valentin Craciun
Affiliation:
valentin.craciun@inflpr.ro, National Institute for Laser, Plasma and Radiation Physics, Bucharest, 077125, Romania
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Abstract

The crystalline structure, composition, chemical bonding and thermal stability of HfO2-Al2O3 mixtures deposited on Si using a combinatorial pulsed laser deposition technique were investigated. After deposition some films were annealed at temperatures from 850 to 950 °C for 6 or 12 minutes. Grazing incidence x-ray diffraction investigations were performed to asses the crystallinity and thermal stability of the annealed layers. Measurements of the Al to Hf ratios were performed using energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy. From simulations of the x-ray reflectivity and spectroscopic ellipsometry spectra the phase composition and thickness of the films was calculated and then the Al to Hf ratios. Al/Hf values of 1 and 8 were found to be necessary to block the crystallization of the films after anneals at 850 and 950 °C, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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