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Microstructural and Electrical Properties of La Doped Ba1划xSrxTiO3 Thin Films For Tunable Microwave Device Applications

Published online by Cambridge University Press:  21 March 2011

M.W. Cole
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A
P.C. Joshi
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A
E. Ngo
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A
C.W. Hubbard
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A
U. Lee
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A
M.H. Ervin
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A
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Abstract

We have investigated the structural, compositional, interfacial, surface morphological and dielectric properties of Ba0.6Sr0.4TiO3 solid solution thin films La doped from 0 to 10 mol%. The doped thin films were prepared by the metalorganic solution deposition technique using carboxylate-alkoxide precursors. After post-deposition annealing in oxygen ambient at 750 °C the films were characterized via x-ray diffraction, Auger electron microscopy, field emission scanning electron microscopy, and atomic force microscopy. The electrical measurements were achieved in the metal-insulator-metal (MIM) configuration with Pt as the top and bottom electrode. Our results demonstrated that La doping had a strong effect on the films microstructural, dielectric and insulating properties. Specifically, 1 mol% La doped BST films exhibited a lower dielectric constant, 283 and higher resistivity 31.4×1013 W-cm with respect to that of undoped BST. The loss tangent and tunability (at 100 kHz) of the 1 mol% La doped BST films were 0.019 and 21% (at E=300kV/cm) respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

1. Knauss, L.A., Pond, J.M., Horwitz, S.J., Chrisey, D.B., Appl. Phys. Lett., 69, 25 (1992).CrossRefGoogle Scholar
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Microstructural and Electrical Properties of La Doped Ba1划xSrxTiO3 Thin Films For Tunable Microwave Device Applications
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Microstructural and Electrical Properties of La Doped Ba1划xSrxTiO3 Thin Films For Tunable Microwave Device Applications
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