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Microcrystalline Single-Junction and Micromorph Tandem Thin Film Silicon Solar Cells

Published online by Cambridge University Press:  10 February 2011

J. Meier
Affiliation:
Institut de Microtechnique, Université de Neuchatel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland
H. Keppner
Affiliation:
Institut de Microtechnique, Université de Neuchatel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland
S. Dubail
Affiliation:
Institut de Microtechnique, Université de Neuchatel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland
U. Kroll
Affiliation:
Institut de Microtechnique, Université de Neuchatel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland
P. Torres
Affiliation:
Institut de Microtechnique, Université de Neuchatel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland
P. Pernet
Affiliation:
Institut de Microtechnique, Université de Neuchatel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland
Y. Ziegler
Affiliation:
Institut de Microtechnique, Université de Neuchatel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland
J.A. Anna Selvan
Affiliation:
Institut de Microtechnique, Université de Neuchatel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland
J. Cuperus
Affiliation:
Institut de Microtechnique, Université de Neuchatel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland
D. Fischer
Affiliation:
Institut de Microtechnique, Université de Neuchatel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchatel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland
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Abstract

Higher open circuit voltages of the microcrystalline silicon bottom cell have a direct impact on the efficiency of the micromorph (μc-Si:H/a-Si:H) tandem cell. In this paper it is shown that open circuit voltages over 500 mV can be achieved leading to gc-Si:H cell efficiencies of 8.5 %. The behaviour of such cells is characterised both by the illuminated and the dark I-V characteristics in function of cell temperature. Microcrystalline cells with Voc-values higher than 500 mV and micromorph tandems possess in general a lower value of the temperature coefficient of the fill factor and thus of the efficiency, when compared to c-Si. Temperature-dependent dark I-V measurements suggest that the dominant recombination mechanism in lgc-Si:H cells is different from that prevailing in a-Si:H solar cells.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

[1] Meier, J., Flückiger, R., Keppner, H., Shah, A., Appl. Phys. Lett. 65, (1994), p. 860.CrossRefGoogle Scholar
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