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Method of Fast Hydrogen Passivation to Solar Cell Made of Crystalline Silicon

Published online by Cambridge University Press:  21 March 2011

Wen-Ching Sun
Affiliation:
Photovoltaics Technology Center Industrial, Technology Research Institute, Hsinchu, Taiwan
Jian-Hong Lin
Affiliation:
Photovoltaics Technology Center Industrial, Technology Research Institute, Hsinchu, Taiwan
Wei-Lun Chang
Affiliation:
Photovoltaics Technology Center Industrial, Technology Research Institute, Hsinchu, Taiwan
Tien-Heng Huang
Affiliation:
Material and Chemical Research Laboratories Intranet, Technology Research Institute, Hsinchu, Taiwan
Chih-Wei Wang
Affiliation:
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
Jia-De Lin
Affiliation:
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
Chwung-Shan Kou
Affiliation:
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
Jian-You Lin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
Sheng-Wei Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
Jenn-Chang Hwang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
Jon-Yiew Gan
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
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Abstract

Plasma immersion ion implantation (PIII) is a technique of material processing and surface modification, using controllable negative high voltage pulsed bias to attract the ion generated from the plasma. The method using PIII treatment quickly improves the performance of solar cell made of crystalline silicon, including monocrystalline, multicrystalline and polycrystalline silicon. Hydrogen ions are attracted and quickly implanted into solar cell under a predetermined negative pulse voltage, thus, the passivation of the crystal defects of the solar cell can be realized in a short period. Meanwhile, the properties of the antireflection layer can not be damaged as the proper operating conditions are used. Consequently, the series resistance can be significantly reduced and the filling factor increases as a result. Both the short-circuit and the open-circuit voltage can be increased. The efficiency can be enhanced.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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