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Metallizing and Die Attaching to Cvd Diamond

Published online by Cambridge University Press:  25 February 2011

CD Iacovangelo ,
PJ DiConza ,
EC Jerabek  and
KP Zarnoch
CD Iacovangelo
Affiliation:
Chemical Process Technology Laboratory GE Corp. R&D Center, Schenectady N.Y. 12301
PJ DiConza
Affiliation:
Chemical Process Technology Laboratory GE Corp. R&D Center, Schenectady N.Y. 12301
EC Jerabek
Affiliation:
Chemical Process Technology Laboratory GE Corp. R&D Center, Schenectady N.Y. 12301
KP Zarnoch
Affiliation:
Chemical Process Technology Laboratory GE Corp. R&D Center, Schenectady N.Y. 12301
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Abstract

The high thermal conductivity of diamond (four times that of copper) and its low dielectric constant (less than alumina or aluminum nitride) makes it a desirable material for electronic substrates. The advent of CVD methods for depositing diamond in large areas at reasonable cost has spurred numerous applications for metallized CVDD. This paper describes several processes developed to provide reliable and stable metallization on CVDD including bond coats, diffusion barriers, vias, and solder die attach. Transition metals were found to provide well-adhered bond coats through carbide formation at the metal/CVDD interface. XPS depth profiles and conductivity measurements of three metallization systems: Ti/Pt/Au, WTi/Au, and Nb/Au after various heat treatments show WTi/Au to be the most stable system. Via filling was accomplished by LPCVD-W and electrolytic Cu for high and low aspect ratio holes respectively. The low thermal expansion coefficient of CVDD, -1.5 ppm/°C, presents a major challenge for reliable die attach of GaAs (5.85 ppm/°C). A novel concept for a compliant interface on CVDD which can overcome this problem will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 401
Copyright
Copyright © Materials Research Society 1994

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References

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