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Measurement of Residual Stress in ZnO Thin Films Deposited on Silicon Wafers by the Indentation Fracture Test
Published online by Cambridge University Press: 01 February 2011
Abstrct:
The indentation fracture test was used to evaluate residual stress in ZnO thin films deposited on silicon wafers. Using the calibrated constants involved in a simple semi-empirical formula, which was developed based on fracture analysis and experimental results, we estimated the residual stress in the ZnO thin films by measuring the indentation-induced crack length as a function of the indentation load.
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- Copyright © Materials Research Society 2004