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Measurement of InxGa1-xN and AlxGa1-xN Compositions by RBS and SIMS

Published online by Cambridge University Press:  10 February 2011

Y. Gao
Affiliation:
301 Chesapeake Drive, Redwood City, California 94063
J. Kirchhoff
Affiliation:
301 Chesapeake Drive, Redwood City, California 94063
S. Mitha
Affiliation:
301 Chesapeake Drive, Redwood City, California 94063
J. W. Erickson
Affiliation:
301 Chesapeake Drive, Redwood City, California 94063
C. Huang
Affiliation:
301 Chesapeake Drive, Redwood City, California 94063
R. Clark-Phelps
Affiliation:
301 Chesapeake Drive, Redwood City, California 94063
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Abstract

Secondary ion mass spectrometry (SIMS) and Rutherford Backscattering Spectrometry (RBS) techniques were used to determine InxGa1-xN and AlxGa1-xN compositions. While RBS is generally considered a quantitative technique for compositional analysis, SIMS has not been. We have applied a new analytical technique, which reduces the matrix effect in SIMS analysis, to accurately determine stoichiometry. The composition of InxGa1-xN (AlxGa1-xN) in the multiple layers and quantum well of the LED can be measured by SIMS, but is inaccessible to RBS.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

(1) Gao, Y., J. Appl. Phys. 64, 3760 (1988).CrossRefGoogle Scholar
(2) Huang, C. et al. in these proceedings.Google Scholar

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Measurement of InxGa1-xN and AlxGa1-xN Compositions by RBS and SIMS
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