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Material Properties of P-Type A-Sic Layers Using Either Diborane or Trimethylboron as Doping Gas

Published online by Cambridge University Press:  25 February 2011

P. Lechner
Affiliation:
Phototronlcs Solartechnlk GmbH, D-8011 Putzbrunn, FRG
M. Gorn
Affiliation:
Phototronlcs Solartechnlk GmbH, D-8011 Putzbrunn, FRG
H. RÜbel
Affiliation:
Phototronlcs Solartechnlk GmbH, D-8011 Putzbrunn, FRG
B. Scheppat
Affiliation:
Phototronlcs Solartechnlk GmbH, D-8011 Putzbrunn, FRG
N. Kniffler
Affiliation:
Phototronlcs Solartechnlk GmbH, D-8011 Putzbrunn, FRG
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Abstract

Hydrogenated amorphous SiC:H films prepared by rf glow discharge from a silane-methane mixture have been B-doped either from diborane or from trimethyl boron (TMB). In the latter a higher hydrogen content is found explaining a higher Tauc optical gap EG, however also a lower dark conductivity for the same boron concentration in the film. Thus the figure of merit of our p-layers doped from TMB is not improved. Further the observed narrowing of the Tauc gap could not be correlated with a decrease of the hydrogen content at high B-doping. The reduction of EG is mainly explained by a drastic broadening of the absorption edge caused by creation of boron induced defects and structural disorder but not due to a shift of the absorption edge.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

Hattori, Y., Kruangam, D., Katoh, K., Nitta, Y., Okamoto, H. and Hamakawa, Y., Proc. of the 19th IEEE PVSC, New Orleans (1987) pp. 689–694.Google Scholar
2. Asano, A. and Sakal, H., Appl. Phys. Lett. 54, 904 (1989).CrossRefGoogle Scholar
3. Yamada, A., Kenne, J., Konagai, M. and Takahashi, K., Appl. Phys. Lett. 46, 272 (1985).CrossRefGoogle Scholar
4. Tarui, H. et al, Technical Digest of the International PVSEC-3 Tokyo (1987), pp. 41–44.Google Scholar
5. Zongyan, Wu, Lloret, A., Slefert, J.-M., Roca i Cabarrocas, P. and Equer, B. in Amorphous Silicon Technology (Mater. Res. Soc. Proc. 149, San Diego, CA 1989) pp. 291296.Google Scholar
6. Gorn, M., Lechner, P., Mohring, H.-D., Rübel, H., Scheppat, B. and Kniffler, N. to be published in Philosophical Magazine B.Google Scholar
7. Solomon, I., Schmidt, M.P. and Tran Quoc, Phys. Rev. B 38, 9895 (1988).CrossRefGoogle Scholar
8. Beyer, W., Wagner, H. and Mell, H., in Materials Issues in Applications of Amorphous Silicon Technology (Mater. Res. Soc. Proc. 49 San Francisco Ca 1989) pp. 189194.Google Scholar
9. Fieselmann, B.F. and Goldstein, B. in Amorphous Silicon Technology (Mater. Res. Soc Proc. 142, San Diego, CA 1989) pp. 441445.Google Scholar
10. Müller, G., Demond, F., Kalbitzer, S., Damjantschitsch, H., Mannsperger, H., Spear, W.E., Le Comber, P.G. and Gibson, R.A., Phil. Mag. B 41 (5), 571 (1980).CrossRefGoogle Scholar
11. Pierz, K., Hilgenberg, B., Mell, H. and Weiser, G., J. of Non-Crystalline Solids 97&98, 63 (1987).CrossRefGoogle Scholar

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Material Properties of P-Type A-Sic Layers Using Either Diborane or Trimethylboron as Doping Gas
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Material Properties of P-Type A-Sic Layers Using Either Diborane or Trimethylboron as Doping Gas
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