Skip to main content Accessibility help
×
Home
Hostname: page-component-59b7f5684b-hd9dq Total loading time: 0.26 Render date: 2022-10-03T11:55:54.165Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "displayNetworkTab": true, "displayNetworkMapGraph": false, "useSa": true } hasContentIssue true

Manipulating 3C-SiC Nanowire Morphology through Gas Flow Dynamics

Published online by Cambridge University Press:  16 January 2012

Kasif Teker
Affiliation:
Department of Physics and Engineering, Frostburg State University, 101 Braddock Road, Frostburg, MD 21532, U.S.A.
Jesse M. Otto
Affiliation:
Department of Physics and Engineering, Frostburg State University, 101 Braddock Road, Frostburg, MD 21532, U.S.A.
Get access

Abstract

Creation of nanoscale building blocks with various sizes and shapes are critical for the progress of nanotechnology. Silicon carbide nanostructures attract interest due to their applications in optoelectronic devices, sensors, high-power/high temperature electronics, and thermoelectrics. This paper presents a detailed study of SiC nanowire morphology change through gas flow dynamics. SiC nanowire synthesis has been carried out by chemical vapor deposition using hexamethyldisilane (HMDS) as source material on SiO2/Si substrate. The study has been limited to several catalyst materials, including nickel (nanoparticle and thin film), cobalt nanoparticles, and gold thin film. The growth runs have been carried out at 1000oC under H2 as carrier gas with flow rates varying from 100 to1000 sccm. A significant change in morphology has been observed. At high flow rates, the nanowires are highly curved and contain sharp kinks, while the nanowires are straight and longer at lower flow rates. Moreover, it is important to note that the flow rate has influenced the nanowire growth-yield significantly. As small as 8nm-diameter SiC nanowire has been observed, as determined by transmission electron microscopy (TEM). These findings will help in controlling the morphology of the SiC nanowires. The fabricated nanowires have also been characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR).

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Casady, J.B. and Johnson, R.W., Solid State Electron. 39, 1409 (1996).CrossRefGoogle Scholar
2. Wong, E.W., Meng, G.W., and Lieber, C.M., Science 277, 1971 (1997).CrossRefGoogle Scholar
3. Liang, C.H., Meng, G.W., Zhang, L.D., Wu, Y.C., and Cui, Z., Chem. Phys. Lett. 329, 323 (2000).CrossRefGoogle Scholar
4. Shenai, K., Scott, R.S., and Baliga, B.J., IEEE Trans. Electron Devices 36, 1811 (1989).CrossRefGoogle Scholar
5. Yakimova, R., Petoral, R.M., Yazdi, G.R., Vahlberg, C., Spetz, A.L., and Uvdal, K, J. Phys. D: Appl. Phys. 40, 6435 (2007).CrossRefGoogle Scholar
6. Kim, D.W., Choi, Y.J., Choi, K.J., Park, J.G., Pimenov, S.M., Frolov, V.D., Abanshin, N.P., Gorfinkel, B.I., Rossukanyi, N.M., and Rukovishnikov, A.I., Nanotechnol. 19, 225706 (2008).CrossRefGoogle Scholar
7. Ali, M., Cimalla, V., Lebecev, V., Stauden, T., Ecke, G., Tilak, V., Sandvik, P., and Ambacher, O., Sens. Actuator B 122, 182 (2007).CrossRefGoogle Scholar
8. Li, G., Burggraf, W.L., Shoemaker, R.J., Eastwood, D., and Stiegman, E.A., Appl. Phys. Lett. 76, 3373 (2000).CrossRefGoogle Scholar
9. Rogdakis, K., Lee, S.Y., Bescond, M., Lee, S.K., Bano, E., and Zekentes, K., IEEE Trans. Elect. Dev. 55, 1970 (2008)CrossRefGoogle Scholar
10. Fu, Q.G., Li, H.J., Shi, X.H., Li, K.Z., Wei, J., and Hu, Z.B., Mater. Chem. Phys. 100, 108 (2006).CrossRefGoogle Scholar
11. Panda, S.K., Sengupta, J., and Jacob, C., J. Nanosci. Nanotechnol. 10, 3046 (2010).CrossRefGoogle Scholar
12. Meng, G.W., Zhang, L.D., Mo, C.M., Zhang, S.Y., Qin, Y., Feng, S.P., and Li, H.J., J. Mater. Res. 13, 2533 (1998).CrossRefGoogle Scholar
13. Kang, B.C., Lee, S.B., and Boo, J.H., Thin Solid Films 215, 464 (2004).Google Scholar
14. Nam, S.H., Kim, M.H., Hyun, J.S., Kim, Y.D., and Boo, J.H., J. Nanosci. Nanotechnol. 10, 2741 (2010).CrossRefGoogle Scholar
15. Baek, Y., Ryu, Y.H., and Yong, K., Mater. Sci. Eng. C 26, 805 (2006).CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Manipulating 3C-SiC Nanowire Morphology through Gas Flow Dynamics
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Manipulating 3C-SiC Nanowire Morphology through Gas Flow Dynamics
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Manipulating 3C-SiC Nanowire Morphology through Gas Flow Dynamics
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *