Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-24T16:43:04.120Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetic Properties of Spin Quantum Cross Devices Utilizing Stray Magnetic Fields

Published online by Cambridge University Press:  19 May 2014

Hideo Kaiju ,
Haruya Kasa ,
Takashi Komine ,
Taro Abe ,
Takahiro Misawa  and
Junji Nishii
Hideo Kaiju
Affiliation:
Laboratory of Nanostructured Functional Materials, Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020, Japan
Haruya Kasa
Affiliation:
Laboratory of Nanostructured Functional Materials, Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020, Japan
Takashi Komine
Affiliation:
Faculty of Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511, Japan
Taro Abe
Affiliation:
Laboratory of Nanostructured Functional Materials, Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020, Japan
Takahiro Misawa
Affiliation:
Laboratory of Nanostructured Functional Materials, Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020, Japan
Junji Nishii
Affiliation:
Laboratory of Nanostructured Functional Materials, Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020, Japan
Get access

Abstract

We investigate structural and magnetic properties of Co thin-film electrodes used in a new type of spin quantum cross (SQC) devices, in which a strong stray magnetic field could be generated between the both edges of magnetic thin-film electrodes. We also calculate the stray field between the two edges of Co thin-film electrodes in SQC devices and discuss the possibility to novel spintronics devices. As a result of magnetic force microscopy (MFM) observations, the stray fields are generated from the Co edges, and they are uniformly distributed. This result indicates that magnetic single-domain structures can be formed. This is consistent with the result obtained by magneto-optical Kerr effect (MOKE). The theoretical calculation reveals that the stray field exhibits as high as 7000 Oe under the condition that the distance between the two Co edges is 5 nm and the Co thickness is 19 nm. These results indicate that SQC devices utilizing stray fields can be expected as novel spintronics devices, such as spin filtering devices and beyond CMOS switching devices.

Keywords

spintronicmagnetic propertiesnanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1708: Symposium VV – Advanced Materials for Rechargeable Batteries , 2014 , mrss14-1708-vv09-10
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Baibich, M. N., Broto, J. M., Fert, A., Nguyen Van Dau, F., Petroff, F., Eitenne, P., Creuzet, G., Friederich, A., and Chazelas, J., Phys. Rev. Lett. 61, 2472 (1988).CrossRefGoogle Scholar
Yuasa, S., Nagahama, T., Fukushima, A., Suzuki, Y., and Ando, K., Nat. Mater. 3, 868 (2004).CrossRefGoogle Scholar
Parkin, S. S., Kaiser, C., Panchula, A., Rice, P. M., Hughes, B., Samant, M., and Yang, S.-H., Nat. Mater. 3, 862 (2004).CrossRefGoogle Scholar
Hirsch, J. E., Phys. Rev. Lett. 83, 1834 (1999).CrossRefGoogle Scholar
Uchida, K., Takahashi, S., Harii, K., Ieda, J., Koshibae, W., Ando, K., Maekawa, S., and Saitoh, E., Nature 455, 778 (2008).CrossRefGoogle Scholar
Kondo, K., Kaiju, H., and Ishibashi, A., J. Appl. Phys. 105, 07D5221 (2009).CrossRefGoogle Scholar
Kaiju, H. et. al., Nanotechnology 21, 015301 (2010).CrossRefGoogle Scholar
Kaiju, H., Kondo, K., and Ishibashi, A., Jpn. J. Appl. Phys. 49, 105203 (2010).CrossRefGoogle Scholar
Stoner, E. C. and Wohlfarth, E. P., Trans. Roy. Soc. A 240, 599 (1948).CrossRefGoogle Scholar
Frei, E. H., Shtrikman, S., and Treves, D., Phys. Rev. 106, 446 (1957).CrossRefGoogle Scholar
Li, S. P., Lebib, A., Peyrade, D., Natali, M., and Chen, Y., Appl. Phys. Lett. 77, 2743 (2000).CrossRefGoogle Scholar
Kaiju, H., Abe, T., Kondo, K., and Ishibashi, A., J. Appl. Phys. 111, 07C104 (2012).CrossRefGoogle Scholar
Hai, P. N., Ohya, S., Tanaka, M., Barnes, S. E., and Maekawa, S., Nature 458, 489 (2009).CrossRefGoogle Scholar