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Magnetic Properties of GaN Layers Implanted by Mn, Cr or V.

Published online by Cambridge University Press:  15 March 2011

Vitaliy A. Guzenko
Affiliation:
Institute of Thin Films and Interfaces (ISG-1), Research Centre Jülich, 52425 Jülich, Germany
Nicolas Thillosen
Affiliation:
Institute of Thin Films and Interfaces (ISG-1), Research Centre Jülich, 52425 Jülich, Germany
Andre Dahmen
Affiliation:
Institute of Thin Films and Interfaces (ISG-1), Research Centre Jülich, 52425 Jülich, Germany
Raffaella Calarco
Affiliation:
Institute of Thin Films and Interfaces (ISG-1), Research Centre Jülich, 52425 Jülich, Germany
Thomas Schäpers
Affiliation:
Institute of Thin Films and Interfaces (ISG-1), Research Centre Jülich, 52425 Jülich, Germany
Martina Luysberg
Affiliation:
Institute of Solid State Research (IFF), Research Centre Jülich, 52425 Jülich, Germany
Lothar Houben
Affiliation:
Institute of Solid State Research (IFF), Research Centre Jülich, 52425 Jülich, Germany
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Abstract

We report on magnetic properties of the GaN layers implanted with 3d transition metal ions. GaN layers grown by MOVPE on sapphire substrates, p- or n-doped, were implanted by Mn, Cr or V ions with a dose of 5×1016 cm−2 and implantation energy of 200 keV. Subsequently, a rapid thermal annealing in nitrogen atmosphere for 5 minutes at different temperatures (700°C – 1050°C) was performed. The magnetization as a function of magnetic field as well as the dependence on temperature revealed paramagnetic behavior for all samples. In addition, an antiferromagnetic coupling between implanted ions was found.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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