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Luminescence of Si-Implanted InP After Rapid Thermal Annealing
Published online by Cambridge University Press: 25 February 2011
Abstract
Changes in the luminescence spectra of InP caused by Si+ implantation and subsequent rapid lamp annealing were studied. It was found that the best activation of dopants was obtained in the case of hot implantation and lamp annealing in regimes close to melting of InP.
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- Copyright © Materials Research Society 1985
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