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Low-Temperature Formation of Device-Quality Polysilicon Films by cat-CVD Method

Published online by Cambridge University Press:  15 February 2011

Hideki Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–12, Japan
Akira Heya
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–12, Japan
Ritsuko Iizuka
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–12, Japan
Akira Izumi
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–12, Japan
An-Qiang He
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–12, Japan
Nobuo Otsuka
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–12, Japan
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Abstract

Polycrystalline silicon (poly-Si) films are deposited at temperatures lower than 300–400°C by the cat-CVD method. In the method, a SiH4 and H2 gas-mixture is decomposed by catalytic cracking reactions with a heated tungsten catalyzer placed near substrates. Carrier transport, optical and structural properties are investigated for this cat-CVD poly-Si. The films show both large carrier mobility and large optical absorption for particular deposition conditions. The cat-CVD poly-Si films are found to be one of the useful materials for thin film transistors and thin film solar cells.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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Low-Temperature Formation of Device-Quality Polysilicon Films by cat-CVD Method
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