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Low-damage Preparation of SiO2 Dielectric Thin Film by the Photo-assisted Oxidation Processing

Published online by Cambridge University Press:  15 July 2011

Takehito Kodzasa
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
Sei Uemura
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
Kouji Suemori
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
Manabu Yoshida
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
Satoshi Hoshino
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
Noriyuki Takada
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
Toshihide Kamata
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
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Abstract

We have already reported that low-temperature (about 170 °C) preparation technique of silicon dioxide (SiO2) dielectric thin film that has high resistivity and extremely smooth surface by the photo oxidation process. In this paper, we have developed a low-damage preparation technique to fabricate a SiO2 thin film by the photo-assisted low temperature oxidation process in order to apply this process to the flexible electronics using for convenient plastic films. We have reported that the SiO2 dielectric thin film with a high insulation performance can be prepared by the low temperature processing below 100°C by improving the pre-processing of the photo oxidation of thin film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

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