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Low Temperature Transparent ITO-based Contacts for Mid-IR Applications

Published online by Cambridge University Press:  18 July 2011

F. Genty
Affiliation:
Supélec, 2 rue Edouard Belin, 57070 Metz, France LMOPS, Laboratoire Matériaux Optique Photonique et Systèmes, EA 4423, Université Paul Verlaine Metz / Supélec, 2 rue Edouard Belin, 57070 Metz, France
S. Margueron
Affiliation:
LMOPS, Laboratoire Matériaux Optique Photonique et Systèmes, EA 4423, Université Paul Verlaine Metz / Supélec, 2 rue Edouard Belin, 57070 Metz, France
S. Ould Saad Hamady
Affiliation:
LMOPS, Laboratoire Matériaux Optique Photonique et Systèmes, EA 4423, Université Paul Verlaine Metz / Supélec, 2 rue Edouard Belin, 57070 Metz, France
J.C. Petit
Affiliation:
LMOPS, Laboratoire Matériaux Optique Photonique et Systèmes, EA 4423, Université Paul Verlaine Metz / Supélec, 2 rue Edouard Belin, 57070 Metz, France
H. Srour
Affiliation:
LMOPS, Laboratoire Matériaux Optique Photonique et Systèmes, EA 4423, Université Paul Verlaine Metz / Supélec, 2 rue Edouard Belin, 57070 Metz, France
A. Karsaklian dal Bosco
Affiliation:
Supélec, 2 rue Edouard Belin, 57070 Metz, France LMOPS, Laboratoire Matériaux Optique Photonique et Systèmes, EA 4423, Université Paul Verlaine Metz / Supélec, 2 rue Edouard Belin, 57070 Metz, France
J. Sadok
Affiliation:
Supélec, 2 rue Edouard Belin, 57070 Metz, France
J. Huguenin
Affiliation:
LMOPS, Laboratoire Matériaux Optique Photonique et Systèmes, EA 4423, Université Paul Verlaine Metz / Supélec, 2 rue Edouard Belin, 57070 Metz, France
M. Bouirig
Affiliation:
Supélec, 2 rue Edouard Belin, 57070 Metz, France
J. Jacquet
Affiliation:
Supélec, 2 rue Edouard Belin, 57070 Metz, France LMOPS, Laboratoire Matériaux Optique Photonique et Systèmes, EA 4423, Université Paul Verlaine Metz / Supélec, 2 rue Edouard Belin, 57070 Metz, France
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Abstract

In this work, thin films of Indium Tin Oxide (ITO)-based materials were tested as potential candidates for mid-IR transparent contacts on Te-doped GaSb and Si-doped InAs semiconductor wafers. Since these contacts are devoted to be inserted in Sb-based devices which are generally MBE-grown at ∼450°C, low-temperature fabrication processes were particularly tested with a maximum temperature of annealing of 400°C. 50 nm-thick ITO films were deposited on glass, Te-doped GaSb and Si-doped InAs wafers and resistivity of 8.10−4 Ω.cm combined with ∼80% of transmittance at 2 μm and ohmic contacts with a specific resistance of 3.10−4 Ω.cm2 were obtained. Then, in order to improve these properties in the mid-IR, other ITO-based materials were tested: In doped ZnO (IZO) and Zn doped ITO (ITZO). The first results obtained on these materials show that the insertion of 10% of Zn in classical ITO structure results in a degradation of the electrical properties of the layer without a real impact on its optical transmittance near 2 μm. Concerning IZO, a large improvement of the transmittance in the whole visible-mid-IR wavelength range was observed for annealed samples at a temperature as low as 350°C. However, the electrical resistivity appears very sensible to the temperature of annealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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