Skip to main content Accessibility help
×
Home
Hostname: page-component-747cfc64b6-zm8ws Total loading time: 0.178 Render date: 2021-06-14T08:05:26.033Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Low Temperature Plasma Anodization of Silicides

Published online by Cambridge University Press:  21 February 2011

J. Perriere
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Université Paris VII, Tour 23, 2 Place Jussieu, 75251 Paris Cedex 05- FRANCE
J. Siejka
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Université Paris VII, Tour 23, 2 Place Jussieu, 75251 Paris Cedex 05- FRANCE
A. Laurent
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Université Paris VII, Tour 23, 2 Place Jussieu, 75251 Paris Cedex 05- FRANCE
J. P. Enard
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Université Paris VII, Tour 23, 2 Place Jussieu, 75251 Paris Cedex 05- FRANCE
F. D'heurle
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Get access

Abstract

In the first time, hundreds nm thick oxide layers were formed by room temperature plasma anodization of some refractory disilicides. Nuclear microanalysis and Rutherford backscattering techniques were used to study the anodic oxidation of various metal silicides (Hf, Ti and Zr) in a multipolar oxygen plasma set-up. We have found that the low temperature (<100 °C) plasma anodization kinetics of Hf or Zr silicides is two orders of magnitude higher than that of Ti silicide although their thermodynamic and physicochemical behaviour are very similar. 200 nm thick Hf (or Zr) and Si mixed oxide layers have been obtained in one hour plasma anodization. Analysis of RBS spectra indicates that the ratio of Si to metal cation concentration in the bulk of oxide grownis the same than the silicide (HfSi2 or ZrSi2), while in the near surface region of oxide (20 to 30 nm) there is an enrichment in metallic oxide leading to a Si to Hf (or Zr) concentration ratio equal to unity. The spectacular difference between the anodization rates in oxygen plasma of Hf (and Zr) silicides comparing to Ti silicides can be related to the catalytic effect on plasma anodization of the Hf and Zr oxides.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below.

References

1- Tu, K.N. and Mayer, J.W., “Thin Films - Interfaces and Reactions”, edited by Poate, J.M., Tu, K.N. and Mayer, J.W., (Wiley, New York 1978).Google Scholar
2- Zirinsky, S., Hammer, W., d'Heurle, F. and Baglin, J., Appl. Phys. Lett., 33, 76 (1978).CrossRefGoogle Scholar
3- d'Heurle, F., Irene, E.A. and Ting, C.Y., Appl. Phys. Lett., 42, 361 (1983).CrossRefGoogle Scholar
4- Murarka, S.P., riaser, D.B., Lindenberger, W.S. and Sinha, A.K., J. Appl. Phys., 51, 3241 (1981).CrossRefGoogle Scholar
5- Murarka, S.P. and.Chang, C.C., Appl. Phys. Lett., 37, 639 ( 1980).CrossRefGoogle Scholar
6- Gourrier, S., Dimitriou, P., Theeten, J.B., Perri~re, J., Siejka, J., Croset, M., Appl. Phys. Lett., 38, 33 (1981).CrossRefGoogle Scholar
7- Perrière, J., Siejka, J., Vilato, P., Laurent, A., Enard, J.P. and Meunier, F., to be submitted to J. Appl. Phys.Google Scholar
8- Chang, R.P.H., Siejka, J., Perrière, J. and Croset, M., 3rd Symp. Plasma Processing, Electrochem. Soc., 82–6, 38 (1982).Google Scholar
9- Perrière, J., Siejka, J. and Chang, R.P.H., Thin Solid Film, 95, 309 (1982).CrossRefGoogle Scholar
10- Limpaecher, K. and.Mackenzie, K.R., Rev. Sci. Instrum., 44, 276 (1973).CrossRefGoogle Scholar
11- Lang, A. and Hershlkwitz, N., J. Appl. Phys., 49, 4707 (1978).CrossRefGoogle Scholar
12- Amsel, G., Nadai, J.P., d'Artemare, E., David, D., Girard, E. and Moulin, J., Nucl. Instrum. Methods, 92, 481 (1971).CrossRefGoogle Scholar
13- Friedel, P., Gourrier, S. and Dimitriou, P., J. Electrochem. Soc., 129, 18 (1981).Google Scholar
14- Siejka, J. and Perrière, J., accepted for presentation at MRS meeting, Boston, November 1984.Google Scholar
15- Kraitchman, J., J. Appl. Phys., 38, 4323 (1967).CrossRefGoogle Scholar
16- Perrière, J. and Siejka, J., unpublished work.Google Scholar
17- Davies, J.A., Domeij, B., Pringle, J.P.S. and Brown, F., J. Electrochem. Soc., 112, 675 (1965).CrossRefGoogle Scholar
18- Mackintosh, W.D. and Plattner, H.H., J. Electrochem. Soc., 124, 396 (1977).CrossRefGoogle Scholar
19- Pringle, J.P.S., Electrochem. Soc. Ext. Abstr., 78-1, 144, Seattle, May 1978.Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Low Temperature Plasma Anodization of Silicides
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Low Temperature Plasma Anodization of Silicides
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Low Temperature Plasma Anodization of Silicides
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *